Samsung (SSNLF.US) unveils 3D memory "technology bombshell": debut of 400-layer V-NAND and zHBM concepts, aiming for the AI memory crown

According to information from Zhihu Finance APP, on Tuesday local time, Samsung Electronics (SSNLF.US) showcased its next-generation memory technologies for the artificial intelligence (AI) era at the "Future Memory and Storage" conference in Santa Clara, California. The technologies displayed included a V10 BV-NAND prototype with more than 400 layers, vertically stacked high-bandwidth memory zHBM, and the zNAND-O architecture. Samsung aims to consolidate its leading position in the nearly 1 trillion USD storage chip market and accelerate its catch-up with SK hynix and Micron Technology (MU.US), who have taken the lead in the AI memory sector.