Samsung Electronics, ASML expand High NA EUV lithography collaboration

Reuters2026/09/08 06:18

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Samsung Electronics expanded its strategic partnership with ASML to deepen collaboration on High NA EUV lithography for next-generation chip manufacturing.
Samsung will join an industry initiative to develop a 12-inch photomask platform for High NA EUV, targeting higher productivity and lower costs.
Plans call for introducing ASML’s High NA EUV into future DRAM high-volume manufacturing by 2028, a first for the industry.

Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Samsung Electronics Co. Ltd. published the original content used to generate this news brief on September 08, 2026, and is solely responsible for the information contained therein.

Disclaimer: The content of this article solely reflects the author's opinion and does not represent the platform in any capacity. This article is not intended to serve as a reference for making investment decisions.

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Samsung Electronics, ASML expand High NA EUV lithography collaboration

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