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Intel Foundry, ASML detail High-NA EUV reticle stitching at SPIE lithography conference

Intel Foundry, ASML detail High-NA EUV reticle stitching at SPIE lithography conference

ReutersReuters2026/09/08 06:27
  • Intel attended the SPIE Photomask Technology + Extreme Ultraviolet Lithography conference to outline progress on High-NA EUV readiness.
  • Intel Foundry, working with ASML, highlighted reticle stitching to use High-NA EUV with current 6-inch masks.
  • The companies also detailed plans to shift toward 6x12-inch masks, targeting industry standards needed for future High-NA scaling.
  • ASML’s Jan van Schoot presented on scanner and mask requirements for half-field stitching on Tuesday, September 8 at 11:00 a.m. Pacific.
  • Intel Foundry’s Kimberly Pierce followed with a talk on stitching for manufacturing at 11:20 a.m. in the same session.


Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Intel Corporation published the original content used to generate this news brief on September 04, 2026, and is solely responsible for the information contained therein.

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