Navitas Awarded US Army Program to Develop 10 kV Silicon Carbide Technology

04:40 PM EDT, 09/28/2026 (MT Newswires) -- Navitas Semiconductor (NVTS) said late Monday it was awarded the Accelerated, Large-Area, 10 kV SiC IGBT, or ALATTIS, program to develop next-generation 10-kilovolt silicon carbide power semiconductor technology. Financial details weren't disclosed. The prototype project, sponsored by the Army Research Laboratory under the US Army Combat Capabilities Development Command, will focus on developing and validating a domestic manufacturing process for ultra-high-voltage silicon carbide power semiconductor devices through design, fabrication and testing.